inchange semiconductor isc product specification isc silicon npn power transistor MJ13333 description collector-emitter sustaining voltage- : v ceo(sus) = 400v(min) high switching speed applications designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. they are partic- ularly suited for line operated switchmode applications. switching regulators inverters solenoid and relay drivers motor controls deflection circuits absolute maximum ratings(t a =25 ) symbol parameter value unit v cev collector-emitter voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 6 v i c collector current-continuous 20 a i cm collector current-peak 30 a i b b base current-continuous 10 a i bm base current-peak 15 a p c collector power dissipation@t c =25 175 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor MJ13333 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0 400 v v ce (sat)- 1 collector-emitter saturation voltage i c = 10a; i b =2a i c = 10a; i b =2a,t c =100 1.8 2.4 v v ce (sat)- 2 collector-emitter saturation voltage i c = 20a; i b =6.7a 5 v v be (sat) base-emitter saturation voltage i c = 10a; i b = 2a i c = 10a; i b = 2a,t c =100 1.8 1.8 v i cev collector cutoff current v cev =400v;v be (off) =1.5v v cev =400v;v be (off) =1.5v;t c =150 0.25 5.0 ma i cer collector cutoff current v ce = 400v; r be = 50 ,t c = 100 5.0 ma i ebo emitter cutoff current v eb = 6v; i c =0 1 ma h fe dc current gain i c = 5a ; v ce = 5v 10 60 f t current gain-bandwidth product i c = 0.3a ;v ce = 10v; f test =1mhz 5 40 mhz c ob output capacitance i e = 0; v cb = 10v; f test =1khz 125 500 pf switching times;resistive load t d delay time 0.02 0.1 s t r rise time 0.3 0.7 s t s storage time 1.6 4.0 s t f fall time i c = 10a , v cc = 250v; i b1 =2a v be (off) = 5v; t p = 10 s; duty cycle 2.0% 0.3 0.7 s isc website www.iscsemi.cn 2
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